In this workshop the latest developments of Infineon Technologies in SiGe BiCMOS technology, modeling and design system for mm-wave applications are discussed. Circuit examples suited for high-performance automotive radar systems are shown. The first talk presents Infineon´s next generation SiGe BiCMOS technology B12HFC. By integrating an innovative SiGe HBT device with maximum oscillation frequency of 500 GHz in a 90 nm CMOS platform, B12HFC significantly surpasses the high-frequency performance of technologies available in production today and improves the integration capabilities. In the next presentation the work on device characterization and modelling and the process design kit for the new technology are described. A comprehensive design system supports all important methods and tools needed for complex mm-wave circuit design. The third talk shows the results of the development of a 76-81 GHz power amplifier for automotive radar systems. In combination with existing SiGe or CMOS transceivers, this component enables the realization of scalable high-performance radar systems with superior resolution at low power consumption. The final presentation shows concepts and circuit results for radar systems beyond 100 GHz. Due to the good RF-performance of SiGe BiCMOS and the large bandwidth available in these frequency ranges, radar systems with outstanding performance will be possible in low-cost silicon-based technologies in future supporting the trend towards autonomous driving. Additionally, other application areas in high frequency ranges and with similar requirements, e.g. in communication or industrial sensing, will profit from the availability of such technologies.
B12HFC: Infineon´s Next Generation 500 GHz fmax SiGe BiCMOS Technology
Modeling and Design System for mm-Wave Circuit Design
SiGe Power Amplifier for Scalable High-Performance Radar Systems
High-Performance SiGe FMCW Radar Demonstrators at 120 GHz and 240 GHz